Use of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate

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dc.authorid0000-0003-4245-787Xen_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorYılmaz, Ercan
dc.contributor.authorDoğan, İlker
dc.contributor.authorTuran, Raşit
dc.date.accessioned2021-06-23T19:21:02Z
dc.date.available2021-06-23T19:21:02Z
dc.date.issued2008
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe use of Al(2)O(3) dielectric in MOS based radiation sensors has been investigated. Their response has been compared with conventional MOS capacitors with a SiO(2) dielectric. The study includes gamma radiation effects with dose up to 4 Gy. The effect of radiation has been determined from the valance band shift in CV curves. The amount of charge induced by the radiation has been calculated and compared with the response of MOS capacitors with SiO(2) with the same and different thicknesses. Fading properties have been studied and compared. Results show that MOS capacitors with Al(2)O(3) dielectric exhibit sensitivity greater than that obtained from MOS capacitors with SiO(2). This higher sensitivity is attributed to higher trapping efficiency in the Al(2)O(3) layer. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.nimb.2008.07.028
dc.identifier.endpage4898en_US
dc.identifier.issn0168-583X
dc.identifier.issue22en_US
dc.identifier.scopus2-s2.0-54549106593en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage4896en_US
dc.identifier.urihttps://doi.org/10.1016/j.nimb.2008.07.028
dc.identifier.urihttps://hdl.handle.net/20.500.12491/6205
dc.identifier.volume266en_US
dc.identifier.wosWOS:000261487900008en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofNuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atomsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMOS Capacitoren_US
dc.subjectMOS Devicesen_US
dc.subjectRadiation Effectsen_US
dc.subjectRadiation Sensoren_US
dc.subjectDosimetersen_US
dc.subjectDielectricsen_US
dc.titleUse of Al(2)O(3) layer as a dielectric in MOS based radiation sensors fabricated on a Si substrateen_US
dc.typeArticleen_US

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