Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics

dc.authorid0000-0002-5168-046Xen_US
dc.authorid0000-0002-2147-1181en_US
dc.authorid0000-0003-3909-2662en_US
dc.authorid0000-0002-6652-4662en_US
dc.contributor.authorKahraman, Ayşegül
dc.contributor.authorMutale, Alex
dc.contributor.authorLök, Ramazan
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2024-01-16T13:26:29Z
dc.date.available2024-01-16T13:26:29Z
dc.date.issued2022en_US
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.descriptionThis work is supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under ARDEB1001-The Scientific and Technological Research Projects Funding Program (Contract Number: 117R054) and the Presidency of Strategy and Budget of the Presidency of Republic of Turkey (Contract Number: 2016K12-2834).en_US
dc.description.abstractHigh-k/n-Si structures were formed with HfSiO4 films annealed at the temperature range of RT (room temperature)-900 degrees C and radiation-induced structural modifications were determined by XRD (X-ray diffraction) and XPS (X-ray photoelectron spectroscopy) techniques in the study. The effect of oxygen-deficient bond contents on the electrical characteristics of HfSiO4 pMOS (n type Metal Oxide Semiconductor) capacitors whose radiation response was investigated in the 0-50 kGy dose range was investigated. While no XRD peak was observed before and after irradiation at RT and 500 degrees C-HfSiO4/n-Si, crystallization started with irradiation at 900 degrees C. The dielectric constant of the film was found in the range of 16-23. It was determined that Hf-Hf oxygen-deficient bonds act as negative charge trapping centers, while Hf-Si and Si-Si oxygen-defective bonds act as positive charge trapping centers. The direction of the C-V (Capacitance-Voltage) curve changed continuously with increasing radiation dose. The change in the interface trap charge density was found to be higher than the change in the oxide trap charge density for all doses in RT-HfSiO4 pMOS capacitor and for 1 kGy at 500 degrees C-HfSiO4 pMOS capacitor. Oxygen defective bond content and Hf-O-Si/Si-O-Si ratios were sufficient to establish a link between structural analyses and electrical characteristics at some doses. In some cases, the frequency-dependent charges had a more dominant effect on the radiation response of the device compared to the oxide trap charges.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) under ARDEB1001-The Scientific and Technological Research Projects Funding Program(Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK)); Presidency of Strategy and Budget of the Presidency of Republic of Turkeyen_US
dc.identifier.citationKahraman, A., Mutale, A., Lok, R., & Yilmaz, E. (2022). Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics. Radiation Physics and Chemistry, 196, 110138.en_US
dc.identifier.doi10.1016/j.radphyschem.2022.110138
dc.identifier.endpage9en_US
dc.identifier.issn0969-806X
dc.identifier.issn1879-0895
dc.identifier.scopus2-s2.0-85128503600en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.radphyschem.2022.110138
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11950
dc.identifier.volume196en_US
dc.identifier.wosWOS:000802906500008en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorLök, Ramazan
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofRadiation Physics and Chemistryen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.relation.tubitakScientific and Technological Research Council of Turkey (TUBITAK) under ARDEB1001-The Scientific and Technological Research Projects Funding Program [117R054]; Presidency of Strategy and Budget of the Presidency of Republic of Turkey [2016K12-2834]
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHafnium Silicateen_US
dc.subjectIrradiationen_US
dc.subjectMOSen_US
dc.subjectRadiation Sensoren_US
dc.subjectInterface Statesen_US
dc.subjectHfo2 Thin-Filmsen_US
dc.titleEffect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristicsen_US
dc.typeArticleen_US

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