Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor

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dc.authorid0000-0003-2239-295X
dc.authorid0000-0002-6652-4662
dc.contributor.authorAktağ, Aliekber
dc.contributor.authorMutale, Alex
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:54:18Z
dc.date.available2021-06-23T19:54:18Z
dc.date.issued2020
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this study, we investigated the effects of applied voltage and frequencies on the electrical properties of Al/(Er2O3(150 nm)/SiO2(20 nm)/n-Si)/Al MOS capacitor. The e-beam deposited Er2O3/SiO2 films were annealed at 650 degrees C in N-2 ambient and the crystal and phase identification of the films were confirmed by X-ray diffractometry. The capacitance-voltage (C-V) and the conductance-voltage (G/omega-V) measurements of the MOS capacitor were carried out for voltage frequencies from 50 kHz to 1 MHz at several steps. The parameters of doping concentration, diffusion potential, built-in potential, barrier height, Fermi energy level, the image force barrier lowering and the depletion layer width were calculated by C-V and G/omega-V data. While the depletion layer width decreased with increasing frequencies, the diffusion potential and the barrier height increased a little with small frequencies (200 kHz <= f) first, then decreased insignificantly. We also studied the frequency effects on the series resistance (R-s) and the interface state density (D-it) through the C-V and G/omega-V curves, and found noticeable decreases in R-s and D-it values with increasing frequency. The measured and calculated results reveal that both R-s and D-it frequency dependence have significant impacts on Er2O3/SiO2/n-Si MOS capacitor properties. These effects are basically because of the interfacial charge behavior of thin SiO2 layer contained in between n-Si and Er2O3.en_US
dc.identifier.doi10.1007/s10854-020-03438-z
dc.identifier.endpage9051en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-85084119190en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage9044en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-03438-z
dc.identifier.urihttps://hdl.handle.net/20.500.12491/10497
dc.identifier.volume31en_US
dc.identifier.wosWOS:000529325000001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorAktağ, Aliekber
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectVoltage Dependenceen_US
dc.subjectElectrical Properties of Al/(Er2O3/SiO2/n-Si)/Al MOS Capacitor
dc.titleDetermination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitoren_US
dc.typeArticleen_US

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