Optical-electrical characteristics of Al/Gd2O3/(CZ-pSi)/Al diodes under gamma ray irradiation

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dc.authorid0000-0002-4438-6465en_US
dc.contributor.authorAl-Esaifer, Husam Raed Sabeeh
dc.contributor.authorAktağ, Aliekber
dc.contributor.authorNayef, Uday Muhsin
dc.contributor.authorDoğancı, Emre
dc.date.accessioned2023-08-11T10:44:29Z
dc.date.available2023-08-11T10:44:29Z
dc.date.issued2022en_US
dc.departmentBAİBÜ, Lisansüstü Eğitim Enstitüsü, Fen Bilimleri, Fizik Ana Bilim Dalıen_US
dc.descriptionPresidency of Turkey, Presidency of Strategy and Budgeten_US
dc.description.abstractThis article aimed to report the results on the properties of Gd2O3/(CZ-pSi) diodes under various gamma ray irradiation dose rates (3, 6, 12, 18, 24, 30, 36, 42, 50 Gy). n-type Gd2O3 films were deposited on a p-type Czochralski-grown monocrystalline silicon (CZ-pSi) wafers by pulsed laser deposition (PLD) technique with varying building laser energies (500, 600, 700, 800, 900 mJ) at room temperature and pressure (3.3 x 10(-2) Pa). Amorphous structures were perceived for all films by XRD. Band gaps of the films were modified by controlling the amount of Gd2O3 on CZ-pSi wafers by laser power during deposition and determined to be between 5.30 and 5.75 eV. The Gd2O3/(CZ-pSi) films were irradiated by a Co-60 gamma-ray source system. The current and voltage (I-V) measurements, before and after irradiation (0-50 Gy), indicated that the current decreases toward zero with increasing doses. Capacitance and voltage (C-V) measurements at frequencies of 10-1000 kHz before and after irradiation showed a shift towards the right side of the pre-irradiation curves for each film. The shift was observed in both I-V and C-V curves with increasing radiation doses at 100 kHz as the average of the frequencies used. Contrary to the decrease in current curves, there was an upward increase in capacitance curves of all films with increasing radiation dose. The best build-in potentials of 0.1 V (800 mJ), 1.2 V (500 mJ) and 1.4 V (600 mJ) were obtained for the laser deposition powers of the Gd2O3/(CZ-pSi) diodes. These results are promising for diodes to be used in the radiation detection applications such as in neutron and alpha particles detectors.en_US
dc.description.sponsorshipPresidency of Turkey, Presidency of Strategy and Budget [2016K12-2834]en_US
dc.identifier.citationAl-Esaifer, H. R. S., Aktağ, A., Nayef, U. M., & Doğanci, E. (2022). Optical-electrical characteristics of Al/Gd2O3/(CZ-pSi)/Al diodes under gamma ray irradiation. Radiation Effects and Defects in Solids, 177(7-8), 783-799.en_US
dc.identifier.doi10.1080/10420150.2022.2077204
dc.identifier.endpage799en_US
dc.identifier.issn1042-0150
dc.identifier.issn1029-4953
dc.identifier.issue7-8en_US
dc.identifier.scopus2-s2.0-85130591975en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage783en_US
dc.identifier.urihttp://dx.doi.org/10.1080/10420150.2022.2077204
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11499
dc.identifier.volume177en_US
dc.identifier.wosWOS:000800186100001en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorDoğancı, Emre
dc.language.isoenen_US
dc.publisherTaylor & Francis Ltden_US
dc.relation.ispartofRadiation Effects and Defects in Solidsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - İdari Personel ve Öğrencien_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHigh K-Dielectric Oxidesen_US
dc.subjectSemiconductorsen_US
dc.subjectGadolinium Oxideen_US
dc.subjectRadiation Effects on Materialsen_US
dc.subjectRare-Earth-Oxidesen_US
dc.subjectThin-Filmsen_US
dc.titleOptical-electrical characteristics of Al/Gd2O3/(CZ-pSi)/Al diodes under gamma ray irradiationen_US
dc.typeArticleen_US

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