Characterization of interface defects in BiFeO3 metal-oxide-semiconductor capacitors deposited by radio frequency magnetron sputtering

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dc.authorid0000-0003-2814-3241en_US
dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0003-2239-295X
dc.authorid0000-0002-6652-4662
dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.contributor.authorAktağ, Aliekber
dc.contributor.authorSeidel, Jan
dc.date.accessioned2021-06-23T19:41:59Z
dc.date.available2021-06-23T19:41:59Z
dc.date.issued2015
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description2nd International Symposium on Renewable Energy and Sustainability (ISRES) -- MAR 20-22, 2013 -- Univ Nacl Autonoma Mexico, Inst Energias Renovables, Temixco, MEXICOen_US
dc.description.abstractIn this work, we study the structural and electrical properties of BiFeO3 MOS capacitors with a special focus on the oxide-semiconductor interface for gate dielectric applications. For this purpose BiFeO3 thin films with a thickness of 300 nm were deposited on p-type Si (100) substrates at 0 degrees C by RF sputtering. Half of the films were annealed at 550 degrees C for 30 min in atmospheric environment while the other half were kept as-deposited. XRD and SEM measurements were performed for both samples for structural characterization. MOS capacitors were fabricated by evaporation technique using Al from samples. For electrical characterizations of MOS capacitors, capacitance-voltage (C-V), conductance-frequency (G(p)/omega-F) and leakage current density-voltage (JV) measurements were performed. The XRD analyses show that BiFeO3 thin films are polycrystalline with some impurity phases, which influence the electronic device properties. The formation of crystallization is confirmed by SEM measurements. Debye length, barrier height and flat band voltages showed variations due to the frequency dependent charges, partially originating from interface defects, in the device structure. Therefore ignoring effects of frequency dependent charges can lead to significant errors in the analysis of electrical characteristics of MOS capacitors. Moreover, the obtained results from analyses of C-V, G(p)/omega-F and J-V characteristics of annealed samples depict that all measured and calculated parameters are of the same order for novel MOS devices. Hence, the BiFeO3 dielectric layer in fabricated MOS devices exhibits a stable insulation property for gate dielectric applications.en_US
dc.identifier.doi10.1007/s10854-015-3174-1
dc.identifier.endpage5993en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-84937526321en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage5987en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-015-3174-1
dc.identifier.urihttps://hdl.handle.net/20.500.12491/8273
dc.identifier.volume26en_US
dc.identifier.wosWOS:000358200300063en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorYılmaz, Ercan
dc.institutionauthorAktağ, Aliekber
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBiFeO3 Metal-Oxide-Semiconductor Capacitorsen_US
dc.titleCharacterization of interface defects in BiFeO3 metal-oxide-semiconductor capacitors deposited by radio frequency magnetron sputteringen_US
dc.typeConference Objecten_US

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