Frequency dependent electrical characteristics of BiFeO3 MOS capacitors

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dc.authorid0000-0003-2814-3241en_US
dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0003-2239-295X
dc.authorid0000-0003-3909-2662
dc.authorid0000-0002-6652-4662
dc.contributor.authorKaya, Şenol
dc.contributor.authorLök, Ramazan
dc.contributor.authorAktağ, Aliekber
dc.contributor.authorSeidel, Jan
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:36:28Z
dc.date.available2021-06-23T19:36:28Z
dc.date.issued2014
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe frequency dependent electrical behavior of BiFeO3 MOS capacitors was studied in this work. BiFeO3 thin films were deposited on p-type Si (100) substrates at 0 degrees C by RF magnetron sputtering and the structures were investigated by XRD and SEM measurements. Electrical characteristics of the capacitors were determined by C-V and G/omega-V measurements for several frequencies from 10 kHz to 1 MHz. The results illustrate that the C-V and G/omega-V characteristics of the devices are sensitive to both frequency and voltage variations. C-V characteristic variations decrease with increasing frequency and are mainly resulting from the presence of interface states (N-s) between silicon and BiFeO3. The G/omega-V characteristics of devices were found to be different for low and high frequencies. Variations in G/omega-V characteristics in the low frequency regions (f < 500 kHz) decrease with increasing frequency, however, in high frequency regions they increase with increasing frequency. For high frequency (1 MHz) characteristics of the capacitor, the capacitance has been corrected by eliminating the effects of the series resistance (R-s) because of its negligible response to high frequency; however, for conductance measurements it cannot be ignored. The C-V and G/omega-V analysis demonstrate that Rs and Ns are important factors that can affect electrical characteristics of the capacitor. (C) 2013 Elsevier B. V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jallcom.2013.08.204
dc.identifier.endpage480en_US
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopus2-s2.0-84884617374en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage476en_US
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2013.08.204
dc.identifier.urihttps://hdl.handle.net/20.500.12491/7997
dc.identifier.volume583en_US
dc.identifier.wosWOS:000326035200081en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorLök, Ramazan
dc.institutionauthorAktağ, Aliekber
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofJournal Of Alloys And Compoundsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBiFeO3 MOS Capacitoren_US
dc.subjectInterface Statesen_US
dc.subjectSeries Resistanceen_US
dc.subjectConductanceen_US
dc.subjectXRDen_US
dc.titleFrequency dependent electrical characteristics of BiFeO3 MOS capacitorsen_US
dc.typeArticleen_US

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