Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:35:29Z
dc.date.available2021-06-23T19:35:29Z
dc.date.issued2014
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractEffects of gamma-ray irradiation on the electrical characteristics of Al2O3 MOS capacitors such as barrier height, acceptor concentration, series resistance and interface state parameters have been studied by analyzing capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. The fabricated MOS capacitors were irradiated with gamma-rays at doses up to five grays. C-V and G/omega-V measurements were recorded prior to and after irradiation at high frequency. The results show that the measured capacitance and conductance values decreased with increasing in irradiation dose and C-V and G/omega curves has been shifted toward the negative voltages. Moreover, the series resistance (R (s)) and density of interface states increased with increasing in irradiation dose and density of interface states (D (it)) were calculated as order of 10(12) eV(-1)cm(-2) prior to and after irradiation. Due to presence and variations in the R (s) values, the corrected and the measured C-V and G/omega-V exhibited different behaviors. Therefore other electrical characteristics were assessed from corrected C (c) characteristics. It was observed that acceptor concentration decreased with increasing in barrier height of device due to changes in interface states and diffusion potential.en_US
dc.identifier.doi10.1007/s10967-014-3295-7
dc.identifier.endpage431en_US
dc.identifier.issn0236-5731
dc.identifier.issn1588-2780
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-84943352145en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage425en_US
dc.identifier.urihttps://doi.org/10.1007/s10967-014-3295-7
dc.identifier.urihttps://hdl.handle.net/20.500.12491/7800
dc.identifier.volume302en_US
dc.identifier.wosWOS:000342134800048en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Radioanalytical And Nuclear Chemistryen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectRadiation Effectsen_US
dc.subjectAl2O3 MOS Capacitoren_US
dc.subjectInterface Statesen_US
dc.subjectSeries Resistanceen_US
dc.subjectBarrier Heightsen_US
dc.titleInfluences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitorsen_US
dc.typeArticleen_US

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