Fabrication and some physical properties of AgIn5S8 thin films

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dc.authorid0000-0001-6490-3792
dc.contributor.authorQasrawi, A.F.
dc.contributor.authorKayed, T. S.
dc.contributor.authorErcan, İsmail
dc.date.accessioned2021-06-23T18:54:34Z
dc.date.available2021-06-23T18:54:34Z
dc.date.issued2004
dc.departmentB.A.İ.B.Ü. Düzce Teknik Eğitim Fakültesien_US
dc.description.abstractAgIn5S8 thin films are deposited on glass substrates, kept at 300 K, by thermal evaporation of AgIn5S8 single crystals under the pressure of 10-5 Torr. The X-ray fluorescence analysis revealed that the films have a weight percentage of ?11.5% Ag, 61.17% In, and 27.33% S which corresponds to 1:5:8 stoichiometric composition. X-ray analysis of the films reveals the polycrystalline nature of the films. The lattice parameter (a) of the films was calculated to be 10.784(5) Å. The dark n-type electrical conductivity of the films was measured in the temperature range of 30-350 K. The conductivity data analysis shows that the thermionic emission of the charge carriers having activation energies of 147 and 224 meV in the temperature ranges of 130-230 and 240-350 K, respectively, are the dominant transport mechanism in the films. The variable range hopping transport mechanism is dominant below 130 K. The room temperature photocurrent-photon energy dependency predicts a band gap of 1.91 eV of the films. The illumination intensity-photocurrent dependency measured in the intensity range of 13-235 W cm-2 reveals monomolecular recombination (linear) in the films and bimolecular recombination (sublinear) at the film surface corresponding to low and high applied illumination intensities, respectively. The time-dependant photocurrent measured at fixed illumination intensity reveals a response time of 0.85, 2.66 and 10.0 s in the time periods of 0-0.5, 0.5-1.0, and 1.0-10.0 s, respectively. © 2004 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.mseb.2004.07.002
dc.identifier.endpage78en_US
dc.identifier.issn0921-5107
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-4344710177en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage73en_US
dc.identifier.urihttps://doi.org/10.1016/j.mseb.2004.07.002
dc.identifier.urihttps://hdl.handle.net/20.500.12491/4488
dc.identifier.volume113en_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorErcan, İsmail
dc.language.isoenen_US
dc.publisherElsevier BVen_US
dc.relation.ispartofMaterials Science and Engineering B: Solid-State Materials for Advanced Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAgIn5S8en_US
dc.subjectConductivityen_US
dc.subjectPhotoeurrenten_US
dc.subjectSpectraen_US
dc.subjectTernaryen_US
dc.subjectThin filmen_US
dc.subjectX-rayen_US
dc.titleFabrication and some physical properties of AgIn5S8 thin filmsen_US
dc.typeArticleen_US

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