Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors

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dc.authorid0000-0002-1836-7033en_US
dc.authorid0000-0002-6652-4662en_US
dc.authorid0000-0002-9573-5805en_US
dc.contributor.authorMorkoç, Berk
dc.contributor.authorKahraman, Ayşegül
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2023-06-16T08:45:03Z
dc.date.available2023-06-16T08:45:03Z
dc.date.issued2021en_US
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.descriptionThis work is supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under ARDEB1001-Scientific and Technological Research Projects Support Program (Contract Number: 117R054) and the Presidency of Strategy and Budget of the Presidency of Republic of Turkey (Contract Number: 2016K12-2834).en_US
dc.description.abstractIn the present work, we examine the effect of structural modifications occurring during the fabrication of Al/Yb2O3/SiO2/n-Si/Al MOS capacitors under different annealing temperatures on the electrical characteristics of the capacitors. The structural properties depending on post-deposition annealing (PDA) were evaluated based on the crystal properties, elemental compositions, and bonding structures of Yb2O3/SiO2 films, while the electrical characteristics were determined by capacitance-voltage (C-V) measurements. The smallest particle size was found in the film annealed at the highest PDA temperature. In all films, the Yb atom concentration was determined higher than the others. The non-stoichiometric silicate (YbSixOy) layer was detected in film structure annealed at 400 degrees C. The Yb 4d and O 1s spectra shifted toward higher binding energies with increasing depth in the films. The density of bonded oxygen species decreased with increasing PDA temperature. It was obtained that capacitance in accumulation region (C-acc), dielectric constant (epsilon(k)), and series resistance (R-s) values tend to decrease with both increasing frequency and PDA temperature. The highest and lowest interface state density (N-it) was found for capacitors obtained from as-deposited and annealed at 400 degrees C structures, respectively. The effective oxide charge density (Q(eff)), which expresses the net charge trapped in the oxide layer, is at the 10(11) level. The barrier heights (phi(B)), which generally tend to increase, have shown that acceptor-type interface states are active on electrical characteristics.en_US
dc.identifier.citationMorkoç, B., Kahraman, A., & Yılmaz, E. (2021). Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors. Journal of Materials Science: Materials in Electronics, 32(7), 9231-9243.en_US
dc.identifier.doi10.1007/s10854-021-05588-0
dc.identifier.endpage9243en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue7en_US
dc.identifier.scopus2-s2.0-85102195718en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage9231en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-021-05588-0
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11134
dc.identifier.volume32en_US
dc.identifier.wosWOS:000625918100003en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.relation.tubitak117R054
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectKappa Gate Dielectricsen_US
dc.subjectRare-Earth-Oxidesen_US
dc.subjectThin-Filmsen_US
dc.subjectFrequencyen_US
dc.subjectMetalen_US
dc.subjectStatesen_US
dc.titleEffects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitorsen_US
dc.typeArticleen_US

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