Impact of SiO(2)interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal-oxide-semiconductor capacitors

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dc.authorid0000-0002-6652-4662en_US
dc.contributor.authorKimbugwe, Nakibinge Tawfiq
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:54:09Z
dc.date.available2021-06-23T19:54:09Z
dc.date.issued2020
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe aim of this study is to reduce the oxide and interface-trap charges and also improve the stability at the oxide-semiconductor interface by growing a SiO(2)interface layer on a Si wafer then depositing Al(2)O(3)thin film. Effective oxide charges density (N-ox), border trap charges density (N-bt), interface states density (N-it), diffusion potential (V-D), donor concentration (N-D), and barrier height(Phi(B)) were calculated using the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at different annealing temperatures. The flat-band voltage (V-fb) changed with annealing temperature and the V(fb)value for the 450 degrees C annealed sample was closest to the idealV(fb). The sample also possessed a high dielectric constant. For these reasons,C-V and G/w-V values of this sample at different frequencies were obtained. Compared to previous studies, very low N-bt values (similar to 10(9) eV(-1) cm(-2)), lowN(it)values (similar to 10(10) eV(-1) cm(-2)) and high Phi(B) values for the annealed samples were obtained due to the SiO2 interface layer.en_US
dc.identifier.doi10.1007/s10854-020-03783-z
dc.identifier.endpage12381en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue15en_US
dc.identifier.scopus2-s2.0-85086777647en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage12372en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-03783-z
dc.identifier.urihttps://hdl.handle.net/20.500.12491/10437
dc.identifier.volume31en_US
dc.identifier.wosWOS:000542132000005en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSemiconductor Capacitorsen_US
dc.titleImpact of SiO(2)interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal-oxide-semiconductor capacitorsen_US
dc.typeArticleen_US

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