A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO4/p-Si MOS capacitors

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorLök, Ramazan
dc.contributor.authorKaya, Şenol
dc.contributor.authorKaraçalı, Hüseyin
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:42:50Z
dc.date.available2021-06-23T19:42:50Z
dc.date.issued2016
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.descriptionSolar Asia International Conference -- 2015 -- Savitribai Phule Pune Univ, Pune, INDIAen_US
dc.description.abstractThe detailed electrical characterizations of Al/HfSiO4/p-Si (MOS) capacitors were investigated. HfSiO4 thin films were fabricated by RF sputtering system with the power of 300 W onto p-type (100) Si substrate and then annealed at 750 A degrees C in Nitrogen environment for 40 min. After fabrication of ohmic contacts, the electrical characteristics of the capacitors were determined by C-V and G/omega-V measurements for several frequencies from 50 kHz to 1 MHz. It is observed that the measured capacitance and conductance curves are quite sensitive to applied voltage frequency due to time dependent interface states (D-it), border traps (N-bt), and series resistance (R-s). We have observed that the series resistance may significantly deviate from the MOS capacitor characteristics and the relevant correction must be performed. In addition, the calculated interface state density was found to be in the order of 10(10) eV(-1) cm(-2) which is in good agreement with reported convenient dielectric layers for MOS based technology. Moreover flat band voltage variation also observed under applied voltage frequencies and this behavior were attributed the basically border states. On the other hand, barrier potentials varied from 0.615 to 0.559 eV with increasing in frequencies depending on the charge accumulations due to time dependent trap sites. Consequently, D-it, N-bt, R-s are important factors that can affect electrical characteristics of the MOS capacitors. Although the reported values vary under different applied frequencies, the fabricated HfSiO4 dielectric layer exhibits demanding electrical characteristics to be used in MOS-based technologies.en_US
dc.identifier.doi10.1007/s10854-016-5461-x
dc.identifier.endpage13160en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-84982903348en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage13154en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-016-5461-x
dc.identifier.urihttps://hdl.handle.net/20.500.12491/8619
dc.identifier.volume27en_US
dc.identifier.wosWOS:000389231000112en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorLök, Ramazan
dc.institutionauthorKaya, Şenol
dc.institutionauthorKaraçalı, Hüseyin
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[Anahtar Kelime Yok]en_US
dc.titleA detailed study on the frequency-dependent electrical characteristics of Al/HfSiO4/p-Si MOS capacitorsen_US
dc.typeConference Objecten_US

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