Improvement in fundamental electronic properties of Bi-2212 electroceramics with trivalent Bi/Tm substitution: A combined experimental and empirical model approach

Basit Öğe Kaydı
dc.authorid0000-0003-0193-799Xen_US
dc.authorid0000-0003-1532-7631en_US
dc.authorid0000-0002-0480-8176en_US
dc.authorid0000-0001-7976-4887en_US
dc.authorid0000-0003-0304-1097en_US
dc.authorid0000-0002-5177-3703en_US
dc.contributor.authorZalaoğlu, Yusuf
dc.contributor.authorErdem, Ümit
dc.contributor.authorBolat, Fevzi Çakmak
dc.contributor.authorAkkurt, Bahadır
dc.contributor.authorTurğay, Tahsin
dc.contributor.authorYıldırım, Gürcan
dc.date.accessioned2023-08-22T12:21:24Z
dc.date.available2023-08-22T12:21:24Z
dc.date.issued2021en_US
dc.departmentBAİBÜ, Mühendislik Fakültesi, Makine Mühendisliği Bölümüen_US
dc.description.abstractThis study delves into the variation in the fundamental aspects of electrical quantities with the partial substitution of Tm impurities at Bi-site in the Bi2.1-xTmxSr2.0Ca1.1Cu2.0Oy (0.00 <= x <= 0.30) ceramic system with the derivatives of electrical resistivity examinations and theoretical approaches. It is found that all the electrical characteristic properties tend to improve with the trivalent Bi/Tm substitution level up to x = 0.07 beyond which they degrade considerably due to the increment of non-superconducting barrier regions, permanent disorders, inhomogeneity, porosity, grain misorientation distribution, internal and surface omnipresent defects, microscopic cracks, and coupling interaction problems throughout the grain boundaries in the Bi-2212 crystal system. Thus, the optimum dopant level of x = 0.07 results in the transition from the over-doped state to optimally doped state in the Bi-2212 crystal system as a consequence of augmented hybridization mechanism. Further, the characteristic two-stage transition temperatures, gap coefficient, Josephson coupled, and thermal energies for the isolated grains and inter-grains are explored. The findings show that the optimum Bi/Tm substitution leads not only to stabilize the superconductivity in the homogeneous superconducting clusters as a result of the increment in the formation of active Cooper pairs but also to decrease significantly the location of resistivity in long-range coherent state due to the increment of hole trap energy. Additionally, a strong link is established between the structural disorders-defects and onset/offset (T-c(onset)/T-c(offset)) transition temperatures using the electrical resistivity features for the first time. The empirical model based on the impurity scattering and lattice strain in the crystal lattices displays that it is possible to achieve the possible highest T-c(onset) and T-c(offset) values of about 86.558 K and 86.445 K, respectively. To sum up, the paper with strong methodology between electrical quantities and structural disorders-defects depending on Tm impurity may be a pioneering research to explain why the characteristic features improve with the optimum substitution and especially open up a novel and feasible area for the advanced engineering, heavy industrial technology, and large-scale applications of ceramic materials.en_US
dc.identifier.citationZalaoglu, Y., Erdem, U., Bolat, F. C., Akkurt, B., Turgay, T., & Yildirim, G. (2021). Improvement in fundamental electronic properties of Bi-2212 electroceramics with trivalent Bi/Tm substitution: a combined experimental and empirical model approach. Journal of Materials Science: Materials in Electronics, 32, 19846-19858.en_US
dc.identifier.doi10.1007/s10854-021-06509-x
dc.identifier.endpage19858en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue14en_US
dc.identifier.scopus2-s2.0-85109264793en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage19846en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-021-06509-x
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11592
dc.identifier.volume32en_US
dc.identifier.wosWOS:000669405900002en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorBolat, Fevzi Çakmak
dc.institutionauthorAkkurt, Bahadır
dc.institutionauthorYıldırım, Gürcan
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDiffusion-Annealing Temperatureen_US
dc.subjectSuperconducting Matrixen_US
dc.subjectTransport-Propertiesen_US
dc.subjectActivation-Energyen_US
dc.subjectCrystal-Structureen_US
dc.subjectTransitionen_US
dc.subjectCeramicsen_US
dc.titleImprovement in fundamental electronic properties of Bi-2212 electroceramics with trivalent Bi/Tm substitution: A combined experimental and empirical model approachen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
yusuf-zalaoglu.pdf
Boyut:
1009.75 KB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin/Full Text
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Makine Mühendisliği Bölümü Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu