Annealing-induced modifications on structural, surface chemical bonding, and electrical characteristics of p-NiO/n-TiO2 heterostructure

Basit Öğe Kaydı
dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-9244-026Xen_US
dc.authorid0000-0002-3930-4269en_US
dc.authorid0000-0003-2681-382Xen_US
dc.authorid0000-0001-7341-1714en_US
dc.authorid0000-0001-6305-5349en_US
dc.authorid0000-0002-5177-3703en_US
dc.authorid0000-0002-3944-0367en_US
dc.contributor.authorKaya, Şenol
dc.contributor.authorSoykan, Uğur
dc.contributor.authorSunkar, Mustafa
dc.contributor.authorKaraboğa, Seda
dc.contributor.authorDoğan, Muhsin Uğur
dc.contributor.authorTerzioğlu, Rıfkı
dc.contributor.authorYıldırım, Gürcan
dc.contributor.authorTerzioğlu, Cabir
dc.date.accessioned2024-05-28T12:28:50Z
dc.date.available2024-05-28T12:28:50Z
dc.date.issued2023en_US
dc.departmentBAİBÜ, Mehmet Tanrıkulu Sağlık Hizmetleri Meslek Yüksekokulu, Tıbbi Hizmetler ve Teknikler Bölümüen_US
dc.descriptionThe present study was partially supported by Presidency of the Republic of Turkey Presidency of Strategy and Budget (Contract Number: 2016K12-2834) and BAIBU under Contract Number: 2018.34.01.1395 and partially were supported by own budget of the authors. [2018.34.01.1395]; Presidency of the Republic of Turkey Presidency of Strategy and Budget; [2016K12-2834]en_US
dc.description.abstractThe influences of annealing temperatures on the electrical characteristics of a p- NiO/n-TiO2 heterojunction diode were thoroughly investigated, taking into account changes in microstructure, morphology, and surface chemistry of the p-NiO/n-TiO2 films, which were deposited on an insulating SiO2/ Si layer. During different annealing processes, considerable stress variations were observed in the p-NiO/n-TiO2 films due to the crystalline evolution of p-NiO and n-TiO2. Notably, the crystallization of the TiO2 layer, which serves as the intermediary between the back contact materials and NiO, led to the evident formation of grain structures. As the annealing temperature increased, the surface roughness also grew from 5.4 to 8.7 nm. At an annealing temperature of 500 degrees C, the formation of a parasitic NiTiOx phase was observed, particularly at the interface between NiO and TiO2. Conversely, the study also revealed that annealing temperature played a significant role in the rectifying behavior, barrier potential, and ideality factor of the diode. Among the various annealing processes, the most favorable results were achieved after annealing at 400 degrees C. At this temperature, the diode demonstrated the lowest ideality factor of 1.89, accompanied by superior rectifying behavior and a barrier potential of 0.70 eV. The findings clearly indicate that any alterations in the surface chemistry and microstructure of the film directly impact the diode's characteristics. Thus, optimizing the annealing temperature becomes crucial for enhancing the performance of the p-NiO/n-TiO2 heterojunction diode.en_US
dc.description.sponsorshipThe present study was partially supported by Presidency of the Republic of Turkey Presidency of Strategy and Budget (Contract Number: 2016K12-2834) and BAIBU under Contract Number: 2018.34.01.1395 and partially were supported by own budget of the authors. [2018.34.01.1395]; Presidency of the Republic of Turkey Presidency of Strategy and Budget; [2016K12-2834]en_US
dc.identifier.citationKaya, S., Soykan, U., Sunkar, M., Karaboğa, S., Doğan, M. U., Terzioğlu, R., ... & Terzioğlu, C. (2023). Annealing-induced modifications on structural, surface chemical bonding, and electrical characteristics of p-NiO/n-TiO2 heterostructure. Journal of Materials Science: Materials in Electronics, 34(24), 1725.en_US
dc.identifier.doi10.1007/s10854-023-11140-z
dc.identifier.endpage12en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue24en_US
dc.identifier.scopus2-s2.0-85168781987en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-023-11140-z
dc.identifier.urihttps://hdl.handle.net/20.500.12491/12178
dc.identifier.volume34en_US
dc.identifier.wosWOS:001057726800002en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorSoykan, Uğur
dc.institutionauthorSunkar, Mustafa
dc.institutionauthorKaraboğa, Seda
dc.institutionauthorDoğan, Muhsin Uğur
dc.institutionauthorTerzioğlu, Rıfkı
dc.institutionauthorYıldırım, Gürcan
dc.institutionauthorTerzioğlu, Cabir
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSI Heterojunction Diodesen_US
dc.subjectThin-Filmsen_US
dc.subjectInfrared-Spectroscopyen_US
dc.subjectGas Sensorsen_US
dc.subjectMicrostructureen_US
dc.subjectMorphologyen_US
dc.titleAnnealing-induced modifications on structural, surface chemical bonding, and electrical characteristics of p-NiO/n-TiO2 heterostructureen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
senol-kaya.pdf
Boyut:
2.85 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin/Full Text
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Elektrik Elektronik Mühendisliği Bölümü Koleksiyonu
Elektronik Ve Otomasyon Bölümü
Fizik Bölümü Koleksiyonu
Gıda İşleme Bölümü
Makine Mühendisliği Bölümü Koleksiyonu
Daha fazla yükle