Annealing-induced modifications on structural, surface chemical bonding, and electrical characteristics of p-NiO/n-TiO2 heterostructure
Yükleniyor...
Dosyalar
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The influences of annealing temperatures on the electrical characteristics of a p- NiO/n-TiO2 heterojunction diode were thoroughly investigated, taking into account changes in microstructure, morphology, and surface chemistry of the p-NiO/n-TiO2 films, which were deposited on an insulating SiO2/ Si layer. During different annealing processes, considerable stress variations were observed in the p-NiO/n-TiO2 films due to the crystalline evolution of p-NiO and n-TiO2. Notably, the crystallization of the TiO2 layer, which serves as the intermediary between the back contact materials and NiO, led to the evident formation of grain structures. As the annealing temperature increased, the surface roughness also grew from 5.4 to 8.7 nm. At an annealing temperature of 500 degrees C, the formation of a parasitic NiTiOx phase was observed, particularly at the interface between NiO and TiO2. Conversely, the study also revealed that annealing temperature played a significant role in the rectifying behavior, barrier potential, and ideality factor of the diode. Among the various annealing processes, the most favorable results were achieved after annealing at 400 degrees C. At this temperature, the diode demonstrated the lowest ideality factor of 1.89, accompanied by superior rectifying behavior and a barrier potential of 0.70 eV. The findings clearly indicate that any alterations in the surface chemistry and microstructure of the film directly impact the diode's characteristics. Thus, optimizing the annealing temperature becomes crucial for enhancing the performance of the p-NiO/n-TiO2 heterojunction diode.
Açıklama
The present study was partially supported by Presidency of the Republic of Turkey Presidency of Strategy and Budget (Contract Number: 2016K12-2834) and BAIBU under Contract Number: 2018.34.01.1395 and partially were supported by own budget of the authors. [2018.34.01.1395]; Presidency of the Republic of Turkey Presidency of Strategy and Budget; [2016K12-2834]
Anahtar Kelimeler
SI Heterojunction Diodes, Thin-Films, Infrared-Spectroscopy, Gas Sensors, Microstructure, Morphology
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
34
Sayı
24
Künye
Kaya, S., Soykan, U., Sunkar, M., Karaboğa, S., Doğan, M. U., Terzioğlu, R., ... & Terzioğlu, C. (2023). Annealing-induced modifications on structural, surface chemical bonding, and electrical characteristics of p-NiO/n-TiO2 heterostructure. Journal of Materials Science: Materials in Electronics, 34(24), 1725.
