Samarium oxide thin films deposited by reactive sputtering : effects of sputtering power and substrate temperature on microstructure, morphology and electrical properties

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0003-2239-295X
dc.authorid0000-0002-6652-4662
dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.contributor.authorKaraçalı, Hüseyin
dc.contributor.authorÇetinkaya, Ali Osman
dc.contributor.authorAktağ, Aliekber
dc.date.accessioned2021-06-23T19:42:08Z
dc.date.available2021-06-23T19:42:08Z
dc.date.issued2015
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this study, the effects of increase in sputtering power and substrate temperature on the microstructural, morphological and electrical characteristics of Sm2O3 thin films have been reported. All films were deposited at 50 degrees C with varying in sputtering power from 100 to 250 Win 50 W steps by the reactive sputtering technique. The crystallization, grain size, and d-spacing of the films were determined by an X-ray diffractometer (XRD). The semi-quantitative compositional changes were investigated by energy-dispersive X-ray (EDX) spectroscopy while microstructural and morphological modifications were studied by atomic force microscopy (AFM). In addition, the electrical evolutions of the films were determined by alternating current (a.c.) conductivity. It was observed that the crystallization of the films was increased with increase in sputtering power up to 200 W and decreased at the power of 250 W. Therefore, the films deposited at 200 W were annealed at 50 degrees C, 125 degrees C, and 200 degrees C, and a continuous crystallization improvement was observed. The composition of the films was improved by both sputtering power and increase in substrate temperature. The grain boundaries and surface roughness of the films were also found to be significantly affected by the change in substrate temperature. The a.c. conductivity of the films gradually decreases from 1.10 x 10(8) Omega(-1) cm(-1) to 2.50 x 10(6) Omega(-1) cm(-1) by increase in sputtering power and substrate temperature. The results show that the Sm2O3 thin films fabricated at 200 W sputtering power and 200 degrees C substrate temperature exhibit requested structural and morphological characteristics. (C) 2015 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.mssp.2015.01.035
dc.identifier.endpage48en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84922544850en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage42en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2015.01.035
dc.identifier.urihttps://hdl.handle.net/20.500.12491/8361
dc.identifier.volume33en_US
dc.identifier.wosWOS:000351652400007en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorYılmaz, Ercan
dc.institutionauthorKaraçalı, Hüseyin
dc.institutionauthorÇetinkaya, Ali Osman
dc.institutionauthorAktağ, Aliekber
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSputtering Poweren_US
dc.subjectSubstrate Temperaturesen_US
dc.subjectRare Earth Oxidesen_US
dc.subjectSm2O3 Thin Filmsen_US
dc.subjectAFMen_US
dc.titleSamarium oxide thin films deposited by reactive sputtering : effects of sputtering power and substrate temperature on microstructure, morphology and electrical propertiesen_US
dc.typeArticleen_US

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