A comprehensive study on the frequency-dependent electrical characteristics of Sm2O3 MOS capacitors

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:42:17Z
dc.date.available2021-06-23T19:42:17Z
dc.date.issued2015
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractIn this paper, we report comprehensive frequency-dependent electrical characterizations of samarium oxide (Sm2O3) MOS capacitors. The Sm2O3 crystal structure and phase identifications of the films were confirmed by X-ray diffractometry. The electrical characterizations were performed in the wide frequency ranges by the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at room temperature and series resistance effects were investigated following the correction of the measured C-V and G/omega-V characteristics. Significant changes have been observed in capacitance, especially in conductance curves following the corrections. Interestingly, the corrected conductance gives two distinct peaks in the corresponding depletion and inversion edge. The Gc/omega-V characteristics in the low-frequency regions decrease with increasing in the frequency, in the high-frequency regions slightly increase with increasing in frequency. In addition, similar distinct behaviors have been observed for the calculated interface state density, diffusion, and barrier potential at low-high frequencies. The main reason of these behaviors can be attributed to the acceptor-/donor-like interface states and/or different relaxation time dependences of interface states. These results demonstrate that series resistance and interface states should be considered during the electrical characterization. Calculated interface density and barrier potential are suitable to use the Sm2O3 as a dielectric layer for MOS-based applications.en_US
dc.identifier.doi10.1109/TED.2015.2389953
dc.identifier.endpage987en_US
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-85027946922en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage980en_US
dc.identifier.urihttps://doi.org/10.1109/TED.2015.2389953
dc.identifier.urihttps://hdl.handle.net/20.500.12491/8429
dc.identifier.volume62en_US
dc.identifier.wosWOS:000350332000043en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorYilmaz, Ercan
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Transactions On Electron Devicesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAcceptor Statesen_US
dc.subjectBarrier Heightsen_US
dc.subjectDonor Statesen_US
dc.subjectInterface Statesen_US
dc.subjectSamarium Oxide (Sm2O3) Metal-Oxide-Semiconductor (MOS) Devicesen_US
dc.subjectSeries Resistanceen_US
dc.titleA comprehensive study on the frequency-dependent electrical characteristics of Sm2O3 MOS capacitorsen_US
dc.typeArticleen_US

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