Investigation of frequency-dependent dielectric properties of ZnO nanorods grown on Si wafer: In/ZnO/p-Si heterostructure

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dc.authorid0000-0002-2752-9671en_US
dc.authorid0000-0002-3133-5693en_US
dc.authorid0000-0002-4214-9159en_US
dc.authorid0000-0003-4740-1138en_US
dc.authorid0000-0001-9063-3028en_US
dc.contributor.authorAl-Khafaji, Ayssar
dc.contributor.authorKoç, Nevin Soylu
dc.contributor.authorAltıntaş, Sevgi Polat
dc.contributor.authorDoğruer, Musa
dc.contributor.authorAltuğ, Cevher
dc.contributor.authorGökçen, Muharrem
dc.contributor.authorVarilci, Ahmet
dc.date.accessioned2023-09-25T06:03:07Z
dc.date.available2023-09-25T06:03:07Z
dc.date.issued2022en_US
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractWe report the result of an in-depth study of growth, structural properties and frequency-dependent dielectric function of ZnO nanorods (NRs) grown on p-Si as well as the In/ZnO/p-Si heterostructures. The NRs were produced by hydrothermal method on the Si substrate in a Teflon-lined stainless-steel cover at 90 degrees C. Scanning electron microscopy analysis indicates nanorod morphology while LeBail refinement of XRD data showed that the ZnO NRs crystallize in hexagonal wurtzile structure with (002) orientation (space group P6(3)mc). The dielectric properties of the In/ZnO/p-Si heterostructure were calculated with the help of experimental admittance measurements performed in the +/- 5 V voltage range and 1 kHz/1 MHz frequency range under ambient conditions. The real part of the complex relative permittivity (epsilon '), the imaginary part of complex relative permittivity (epsilon '') and loss tangent (tan delta) were obtained. Also, real (M ') and imaginary (M '') parts of the complex electric modulus (M*) were extracted. Frequency dependence in the epsilon ', epsilon '' and tan delta was attributed to the frequency dependence of the space charge polarization. The real part of electrical modulus was found to be nearly independent of frequency and voltage for positive voltages.en_US
dc.identifier.citationAl-Khafaji, A., Soylu-Koc, N., Altintas, S. P., Dogruer, M., Altug, C., Gokcen, M., & Varilci, A. (2022). Investigation of frequency-dependent dielectric properties of ZnO nanorods grown on Si wafer: In/ZnO/p-Si heterostructure. Journal of Materials Science: Materials in Electronics, 33(10), 8247-8255.en_US
dc.identifier.doi10.1007/s10854-022-07976-6
dc.identifier.endpage8255en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-85125703010en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage8247en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-022-07976-6
dc.identifier.urihttps://hdl.handle.net/20.500.12491/11730
dc.identifier.volume33en_US
dc.identifier.wosWOS:000765736100006en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKoç, Nevin Soylu
dc.institutionauthorAltıntaş, Sevgi Polat
dc.institutionauthorDoğruer, Musa
dc.institutionauthorAltuğ, Cevher
dc.institutionauthorVarilci, Ahmet
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectrical-Propertiesen_US
dc.subjectThin-Filmsen_US
dc.subjectPerformanceen_US
dc.subjectModulusen_US
dc.subjectItoen_US
dc.subjectIn/ZnO/p-Si heterostructuresen_US
dc.titleInvestigation of frequency-dependent dielectric properties of ZnO nanorods grown on Si wafer: In/ZnO/p-Si heterostructureen_US
dc.typeArticleen_US

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