A comprehensive study on usage of Gd2O3 dielectric in MOS based radiation sensors considering frequency dependent radiation response

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dc.authorid0000-0002-1836-7033
dc.authorid0000-0002-6652-4662
dc.contributor.authorKahraman, Ayşegül
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:49:25Z
dc.date.available2021-06-23T19:49:25Z
dc.date.issued2018
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractThe purpose of this study is to investigate the Gadolinium Oxide (Gd2O3) as a gate dielectric/sensitive region in MOS based radiation sensors and to provide a detailed description of the frequency-dependent gamma irradiation response of a Gd2O3 MOS capacitor. The 254 nm thick-Gd2O3 films were deposited on p-type Si wafers by using RF magnetron sputtering. The radiation response of the Gd2O3 MOS capacitors was investigated by 6 degrees Co irradiation in the range of 0.5-70 Gy. The capacitance-voltage (C-V) curves shifted to a more positive potential with increasing radiation dose due to there being more trapped electrons than holes. The variation in the oxide trap charge density was found to be in the range of - 3.21 x 10(11) +/- 1.57 x 10(11) cm(-2) - - 1.70 x 10(12) +/- 8.33 x 10(10) cm(-2) at 100 kHz and - 2.26 x 10(11) +/- 1.02 x 10(10) cm(-2) - - 1.30 x 10(12) +/- 6.02 x 10(10) cm(-2) (70 Gy) at 1 MHz. The maximum variation in the interface trap charge density was in order of 10(11) cm(-2) at 1 MHz. The results indicate that the contribution of the oxide trap charge to radiation response of the Gd2O3 MOS capacitor is higher than that of the interface trap charges. The radiation sensitivities of the Gd2O3 MOS capacitor for 100 kHz and 1 MHz were determined as 59.2 +/- 2.9 mV/Gy and 62.7 +/- /9 mV/Gy, respectively. The percentage fading values (dose storage capability) measured in the time range of 25-145 min for 100 kHz varied from 2.2% to 11.4%.en_US
dc.identifier.doi10.1016/j.radphyschem.2018.07.017
dc.identifier.endpage42en_US
dc.identifier.issn0969-806X
dc.identifier.scopus2-s2.0-85050477790en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage36en_US
dc.identifier.urihttps://doi.org/10.1016/j.radphyschem.2018.07.017
dc.identifier.urihttps://hdl.handle.net/20.500.12491/9499
dc.identifier.volume152en_US
dc.identifier.wosWOS:000446149700006en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofRadiation Physics And Chemistryen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGd2O3en_US
dc.subjectFrequencyen_US
dc.subjectMOSen_US
dc.subjectHigh-ken_US
dc.subjectGamma Responseen_US
dc.subjectRadiation Sensoren_US
dc.titleA comprehensive study on usage of Gd2O3 dielectric in MOS based radiation sensors considering frequency dependent radiation responseen_US
dc.typeArticleen_US

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