Characterization of CdZnTe thin films prepared by magnetron sputtering from a single CdZnTe target
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Dosyalar
Tarih
2011
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We utilized a sputtering technique by using a single Cadmium Zinc Tellurium (CdZnTe) target to form alloys of 200 nm Cd 1-xZn xTe thin films onto heated (200-300-400°C) and unheated glass substrates for all 0 < x < 1 range. The films then were annealed at 150-300-450°C under the N 2 ambient. Measurements were performed before and after annealing by XRD, XPS, FTIR spectroscopes. The XRD studies revealed that heated Cd 1-xZn xTe films present a cubic oriented (111), (220) and (311) polycrystalline structure, whereas unheated films are largely amorphous. The XPS results under UHV were support the XRD measurements. FTIR analysis indicated that the increasing of deposition temperature increases absorption intensity. Depending on preparation conditions and heat treatment, the optical band gap calculations of respective films were obtained in the range of 1.46-1.95 eV. Results illustrate that Cd 1-xZn xTe thin film sputtered at 400°C and annealed at 450°C under the N 2 ambient displays a demanding behavior.
Açıklama
37th IEEE Photovoltaic Specialists Conference, PVSC 2011 -- 19 June 2011 through 24 June 2011 -- Seattle, WA -- 89752
Anahtar Kelimeler
Annealing, Zinc, Sputtering, Optical films, Photonic Band Gap, X-ray Scattering
Kaynak
Conference Record of the IEEE Photovoltaic Specialists Conference
WoS Q Değeri
Scopus Q Değeri
N/A
