Thermal phase separation of ZrSiO4 thin films and frequency-dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors

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dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-6652-4662en_US
dc.contributor.authorLök, Ramazan
dc.contributor.authorKaya, Şenol
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:49:44Z
dc.date.available2021-06-23T19:49:44Z
dc.date.issued2018
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this work, the thermal phase separation and annealing optimization of ZrSiO4 thin films have been carried out. Following annealing optimization, the frequency-dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors were investigated in detail. The chemical evolution of the films under various annealing temperatures was determined by Fourier transform infrared spectroscopy (FTIR) measurements. The phase separation was determined by x-ray diffraction (XRD) measurements. The electrical parameters were determined via the capacitance-voltage (C-V), conductance-voltage (G/omega) and leakage-current-voltage (Ig-Vg). The results demonstrate that zirconium silicate formations are present at 1000 degrees C annealing with the SiO2 interfacial layer. The film was in amorphous form after annealing at 250 degrees C. The tetragonal phases of ZrO2 were obtained after annealing at 500 degrees C. When the temperature approaches 750 degrees C, transitions from the tetragonal phase to the monoclinic phase were observed. The obtained XRD peaks after 1000 degrees C annealing matched the crystalline peaks of ZrSiO4. This means that the crystalline zirconium dioxide in the structure has been converted into a crystalline silicate phase. The interface states increased to 5.71 x 10(10) and the number of border traps decreased to 7.18 x 10(10) cm(-2) with the increasing temperature. These results indicate that an excellent ZrSiO4/Si interface has been fabricated. The order of the leakage current varied from 10(-9) Acm(-2) to 10(-6) Acm(-2). The MOS capacitor fabricated with the films annealed at 1000 degrees C shows better behavior in terms of its structural, chemical and electrical properties. Hence, detailed frequency-dependent electrical characteristics were performed for the ZrSiO4 thin film annealed at 1000 degrees C. Very slight capacitance variations were observed under the frequency variations. This shows that the density of frequency-dependent charges is very low at the ZrSiO4/Si interface. The barrier height of the device varies slightly from 0.776 eV to 0.827 eV under frequency dispersion. Briefly, it is concluded that the devices annealed at 1000 degrees C exhibit promising electrical characteristics.en_US
dc.identifier.doi10.1088/1361-6641/aabb68
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85046672921en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1088/1361-6641/aabb68
dc.identifier.urihttps://hdl.handle.net/20.500.12491/9600
dc.identifier.volume33en_US
dc.identifier.wosWOS:000430400300001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.institutionauthorKaya, Şenol
dc.institutionauthorLök, Ramazan
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofSemiconductor Science And Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZrSiO4 MOS Capacitorsen_US
dc.subjectHigh-ken_US
dc.subjectBarrier Heighten_US
dc.subjectElectrical Characteristicsen_US
dc.subjectInterface Statesen_US
dc.subjectBorder Trapsen_US
dc.titleThermal phase separation of ZrSiO4 thin films and frequency-dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitorsen_US
dc.typeArticleen_US

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