Optical and electrical properties of E-Beam deposited TiO2/Si thin films

dc.authorid0000-0003-1511-2219en_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorAbubakar, Saleh
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:49:41Z
dc.date.available2021-06-23T19:49:41Z
dc.date.issued2018
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractIn this paper, optical and electrical properties of E-Beam deposited TiO2/Si thin films have been studied and investigated extensively. The films were deposited on p-type (100) silicon wafer by using electron beam evaporation technique. The thickness of the thin films was measured by a spectroscopic reflectometer, which is about 216 nm. The fabricated titanium oxide (TiO2) thin films were annealed at 800 A degrees C for 1 h under N-2 ambient. X-ray diffraction measurements were performed to study the structure and phase identification of the fabricated TiO2 thin films. For the optical properties, reflection, transmittance, refractive index and absorption coefficient were obtained and analyzed. The photocurrent and dark current of the fabricated films were measured by I-V measurements. The measurement of the current-voltage (I-V) characteristics possesses good ohmic contact. The electrical characterizations of the films were performed in the range of the low frequencies (50 and 100 kHz) and high frequencies (750 kHz and 1 MHz) by the capacitance-voltage and conductance-voltage measurements at room temperature. The capacitance of the fabricated TiO2 MOS capacitor at both high and low frequencies increases with the decrease in frequencies. The obtained conductance curves (peaks) increase with the decreasing in the frequencies. This can be due to the interface state density, series resistance and interfacial dielectric of the fabricated MOS capacitors. The variation in the characteristics of the fabricated film shows that TiO2 is a promising candidate to be used in the optoelectronic and future UV detector applications as a switch, such as an optical amplifier, emitter, and UV light detectors.en_US
dc.identifier.doi10.1007/s10854-018-9029-9
dc.identifier.endpage9885en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85044926492en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage9879en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-018-9029-9
dc.identifier.urihttps://hdl.handle.net/20.500.12491/9585
dc.identifier.volume29en_US
dc.identifier.wosWOS:000433031400017en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorAbubakar, Saleh
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal Of Materials Science-Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectTiO2/Si Thin Filmsen_US
dc.subjectE-Beam
dc.subjectOptical and Electrical Properties
dc.titleOptical and electrical properties of E-Beam deposited TiO2/Si thin filmsen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
saleh-abubakar.pdf
Boyut:
1.07 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin/Full Text