Ge nanocrystals embedded in SiO2 in MOS based radiation sensors
Yükleniyor...
Dosyalar
Tarih
2010
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this work the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated SiO2 films containing nanoparticles of Ge were grown using the r f -magnetron sputtering technique Formation of Ge nanocrystals was observed after high temperature annealing in an inert atmosphere and confirmed by Raman measurements The intensity of the Raman signal originating from Ge nanocrystals was found to decrease with increasing gamma radiation The study also includes the gamma radiation effects on MOS structure with Ge nanocrystals embedded in SiO2 The gamma radiation effects from 500 up to 4000 Gray were investigated Capacitance-voltage measurements were performed and analyzed Oxide traps and interface trap charges were calculated Results show that MOS structure with Ge nanocrystals embedded in SiO2 is a good candidate to be used in radiation sensors especially at high radiation doses (C) 2010 Elsevier B V All rights reserved
Açıklama
Anahtar Kelimeler
Germanium, Nanocrystals, R.F. Sputtering, Gamma Radiation, Raman Spectroscopy
Kaynak
Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
268
Sayı
22
