Co-60 gamma irradiation effects on electrical characteristics of HfO2 MOSFETs and specification of basic radiation- induced degradation mechanism

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dc.authorid0000-0002-4668-6381en_US
dc.authorid0000-0001-8152-9122en_US
dc.authorid0000-0002-6652-4662
dc.contributor.authorKaya, Şenol
dc.contributor.authorJaksic, Aleksandar
dc.contributor.authorYılmaz, Ercan
dc.date.accessioned2021-06-23T19:49:34Z
dc.date.available2021-06-23T19:49:34Z
dc.date.issued2018
dc.departmentBAİBÜ, Rektörlük, Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezien_US
dc.description.abstractWe have studied the effects of Co-60 gamma irradiation on electrical characteristics of metal oxide semiconductor field effect transistors (MOSFETs) with radio-frequency-sputtered Hafnium Oxide (HfO2) gate dielectric, and possible interaction mechanisms between irradiation and HfO2/Si gate stack. The electrical response of the HfO2 devices has been compared with those of experimental and commercial MOSFETs with conventional Silicon Dioxide (SiO2) dielectrics of the similar thickness. We have observed only small threshold voltage shifts during irradiation of the HfO2 MOSFETs; the SiO2 MOSFETs exhibit more than 10 times larger shifts. We have found interesting radiation-induced charge trapping mechanisms by analysis of X-ray photoelectron spectroscopy (XPS) measurements of HfO2/Si gate dielectric stack. The XPS analyses before and after different irradiation doses indicate that both the passivation and charge trapping occurs under radiation exposure. The passivation of dangling bonds significantly decreases the sensitivity of the HfO2 MOSFETs to irradiation. The small threshold shift is predominantly due to the breaking oxygen bonds, especially in HfOx and SiOx core levels. The obtained results demonstrate that the HfO2 based devices are almost insensitive to the irradiation compared to the conventional SiO2 gate and passivation effects significantly decrease radiation sensitivity of HfO2- based device.en_US
dc.identifier.doi10.1016/j.radphyschem.2018.03.007
dc.identifier.endpage13en_US
dc.identifier.issn0969-806X
dc.identifier.scopus2-s2.0-85044473391en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage7en_US
dc.identifier.urihttps://doi.org/10.1016/j.radphyschem.2018.03.007
dc.identifier.urihttps://hdl.handle.net/20.500.12491/9551
dc.identifier.volume149en_US
dc.identifier.wosWOS:000433649600002en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKaya, Şenol
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofRadiation Physics And Chemistryen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHafnium Oxide (HfO2)en_US
dc.subjectHigh ken_US
dc.subjectIrradiation Effecten_US
dc.subjectGamma-Rayen_US
dc.subjectRadiation-Induced Degradationen_US
dc.subjectCharge Trapping Mechanismen_US
dc.titleCo-60 gamma irradiation effects on electrical characteristics of HfO2 MOSFETs and specification of basic radiation- induced degradation mechanismen_US
dc.typeArticleen_US

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