Yazar "Gao, Hongwei" seçeneğine göre listele

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    Enhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice buffer
    (IOP Publishing Ltd, 2023) Chen, Xin; Zhong, Yaozong; Yan, Shumeng; Guo, Xiaolu; Gao, Hongwei; Yılmaz, Ercan
    The characteristics of an AlGaN/GaN high-electron-mobility transistor buffer structure are studied and optimized by employing an AlN/GaN superlattice (SL) structure. Through vertical leakage analysis and back-gate measurement, combined with Silvaco-TCAD simulation, the influence of buffer trapson the carrier transport behaviors and electrical performance for SL buffer structures under a high electric field is analyzed. The AlN/GaN SL buffer structures are further optimized with various AlN/GaN thickness ratios and their total thickness through both simulation and experimental studies. As a result, a high breakdown voltage of up to 1.3 kV with a maximum breakdown electric field of 2.8 MV cm(-1) has been achieved. Moreover, the buffer trapping effect is dramatically suppressed, leading to a minimum drop of channel current for the optimized sample, in which donor traps are found to play a positive role in the device dynamic characteristics.
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    Ultrahigh-responsivity ultraviolet photodetectors based on AlGaN/GaN double-channel high-electron-mobility transistors
    (American Chemical Society, 2023) Wang, Haodong; Feng, Meixin; Zhong, Yaozong; Chen, Xin; Gao, Hongwei; Yılmaz, Ercan; Sun, Qian
    In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photo generated carriers and make it work as a two-terminal normally off device. The device exhibited a high responsivity of 2.1 x 10(7) A/W and a high specific detectivity of 1.7 x 10(15) Jones under the illumination of 9.7 mu W/cm(2), indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.