ANNEALING TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY AND OPTICAL PROPERTIES OF IGZO THIN FILMS PRODUCED BY THERMAL EVAPORATION

The use of Transparent Conductive Oxide (TCO) thin films in technologyhas increased in the last decades. These materials have good electricalconductivity visible light transmittance simultaneously. TCOs have manytechnology applications such as thin film transducers (TFTs), conductiveelectrodes, capacitors, sensors, electrochemical devices. Although indiumtin oxide (ITO) is the most common semiconductor among these materials,studies on N-type indium-gallium-zinc oxide (IGZO) that better electricalproperties (electron mobility µFE>10 cm2/V.s) cm2/ Vs) have increased inrecent years. In this study, IGZO thin films are produced which have a veryhomogeneous amorphous structure via using thermal evaporation system onglass substrates. Structural characterization was carried out by atomicforce microscopy and scanning electron microscopy on IGZO thin films forvarious thickness and annealing temperatures. Transmittance and thicknessmeasurements were performed using UV-VIS spectroscopy and profilometer for the investigation of optical properties, respectively. It is seen that grainsize grows and grain boundaries decreases when annealing temperature isincreased. This results in reduced roughness and increased opticaltransmittance and energy gap (Eg).