Influence of gamma irradiation on silicon nitride mis capacitors and radiation hardness

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dc.authorid0000-0002-6652-4662
dc.contributor.authorYılmaz, Ercan
dc.contributor.authorTugay, Evrim
dc.contributor.authorAktaga, Aliekber
dc.contributor.authorTuranc, Raşit
dc.date.accessioned2021-06-23T18:56:27Z
dc.date.available2021-06-23T18:56:27Z
dc.date.issued2012
dc.departmentBAİBÜ, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.description1st International Conference on Radiation and Dosimetry in Various Fields of Research, RAD 2012 -- 25 April 2012 through 27 April 2012 -- -- 142097en_US
dc.description.abstractSiNx thin films with thickness of 100 nm were deposited on p-type (100) silicon wafer by using plasmaenhanced chemical vapor deposition (PECVD) method. After deposition the samples annealed at 500 and 700 °C for 1h at N2 ambient. The chemical bonds and their densities inside the films were investigated by Fourier transform infrared (FTIR) spectroscopy. The as-deposited and annealed samples with Al/SiNx/Si structure as metal-insulatorsemiconductor (MIS) capacitors were exposed to a 60-Co gamma radiation source with a dose rate of 0.015 Gray/S. Capacitance-voltage (CV) measurements were performed for frequencies of 10, 100 and 1000 kHz before and after radiation exposure with doses of up to 40 Gray. It was found that before gamma irradiation compared with asdeposited sample, the annealed samples exhibit less negative flatband voltages (Vfb) shift indicating the relative reduction in positive charge in the SiNx:H samples. After gamma irradiation for all samples a negative shift has been observed in Vfb, being more pronounced in the samples annealed at higher annealing temperature of 700 °C. The more strike feature is that the amount of shift does not change by increasing radiation dose after first irradiation, in which we attributed to the radiation hardening in Al/SiNx/Si MIS capacitors which can be used in space and nuclear applications as a radiation hardened device.en_US
dc.description.sponsorship2012K120360en_US
dc.description.sponsorshipAcknowledgement: This work is supported by Ministry of Development of Turkey under the contract number 2012K120360. The authors wish to thank Middle East Technical University for their generous support.en_US
dc.identifier.endpage26en_US
dc.identifier.isbn9788661250637
dc.identifier.issn2466-4626
dc.identifier.scopus2-s2.0-85057576292en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage23en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12491/5007
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85057576292&partnerID=40&md5=1a3ce12c7d3caadef56519b315cb7b6f
dc.identifier.volume2012-Aprilen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYılmaz, Ercan
dc.language.isoenen_US
dc.publisherRAD Associationen_US
dc.relation.ispartofRAD Conference Proceedingsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectC-V Characterizationen_US
dc.subjectGamma Radiationen_US
dc.subjectPECVDen_US
dc.subjectSilicon Nitrideen_US
dc.titleInfluence of gamma irradiation on silicon nitride mis capacitors and radiation hardnessen_US
dc.typeConference Objecten_US

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