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Öğe Succession of the low temperature phase transitions in TlInS2 crystals(Pergamon-Elsevier Science Ltd, 1995) Allakhverdlev, K. R.; Türetken, N.; Salaev, Ferid M.; Mikailov, F. A.Two additional incommensurate phase transitions (PT's) at Ti = 206 K and T-tr = 79 K were observed in TlInS2 crystals. Peculiarities of the temperature behaviour of the dielectric susceptibility and the dielectric loops allowed to consider the PT's at Tc1 = 204 K and Tc2 = 201 K as incomplete lock-in transitions and the PT at T approximate to 195 K as a temperature range of the final lock-in transition. The PT at T-tr = 79 K was considered as an isomorphous transition. The experimental results of the second harmonic generation signal at low temperature are also in favour of such a conclusion. Peculiarities of the temperature behaviour of the dielectric properties at low temperature are qualitatively explained by means of the theory of two nonequivalent sublattices.Öğe Thermal hysteresis and memory effects in TlInS2(Gordon Breach Sci Publ Ltd, 1998) Allakhverdiev, Kerim R.; Mikailov, F. A.; Kulibekov, A. M.; Türetken, NaifThe dielectric susceptibility of layered TlInS2 was studied in the temperature range of successive phase transitions. Thermal hysteresis was observed in the incommensurate phase. It was shown that after annealing the crystal at a fixed temperature within the incommensurate phase, the existing temperature interval of this phase reveals noticeable broadening. The thermal memory effect is discussed using a defect density wave model.