Yazar "Berdalovic, I." seçeneğine göre listele

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  • Küçük Resim
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    A 1-?W radiation-hard front-end in a 0.18-?m CMOS process for the MALTA2 monolithic sensor
    (IEEE-Institute Electrical Electronics Engineers Inc, 2022) Piro, F.; Allport, P.; Asensi, I.; Berdalovic, I.; Bortoletto, D.; Oyulmaz, Kaan Yüksel
    In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. The circuit is implemented in the 180-nm CMOS imaging technology from the TowerJazz foundry and integrated into the MALTA2 chip, which is part of a development that targets the specifications of the outer pixel layer of the ATLAS Inner Tracker upgrade at the LHC. One of the main challenges for monolithic sensors is a radiation hardness up to 10(15) 1-MeV n(eq)/cm(2) non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to 3 . 10(15) 1-MeV n(eq)/cm(2) and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).
  • Küçük Resim
    Öğe
    Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm
    (IOP Publishing Ltd, 2022) Rijnbach, M. van; Allport, P.; Asensi, I.; Berdalovic, I.; Bortoletto, D.; Buttar, C.; Denizli, Haluk; Oyulmaz, Kaan Yüksel
    The MALTA family of depleted monolithic pixel sensors produced in TowerJazz 180 nm CMOS technology target radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness >10(15) 1 MeV n(eq)/cm(2) and time resolution below 2 ns, with uniform charge collection and efficiency across the pixel of size 36.4 x 36.4 mu m(2) with small collection electrode. This contribution will present the comparison of samples produced on high-resistivity epitaxial silicon with Czochralski substrates, before and after neutron irradiation, and results from MALTA2 with a new cascoded front-end flavour that further reduces the RTS noise.