Yazar "Asensi, I." seçeneğine göre listele

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    A 1-?W radiation-hard front-end in a 0.18-?m CMOS process for the MALTA2 monolithic sensor
    (IEEE-Institute Electrical Electronics Engineers Inc, 2022) Piro, F.; Allport, P.; Asensi, I.; Berdalovic, I.; Bortoletto, D.; Oyulmaz, Kaan Yüksel
    In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. The circuit is implemented in the 180-nm CMOS imaging technology from the TowerJazz foundry and integrated into the MALTA2 chip, which is part of a development that targets the specifications of the outer pixel layer of the ATLAS Inner Tracker upgrade at the LHC. One of the main challenges for monolithic sensors is a radiation hardness up to 10(15) 1-MeV n(eq)/cm(2) non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to 3 . 10(15) 1-MeV n(eq)/cm(2) and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).
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    Future developments of radiation tolerant sensors based on the MALTA architecture
    (IOP Publishing Ltd, 2023) Dobrijevic, D.; Allport, P.; Asensi, I.; Berlea, D.; Bortoletto, D.; Oyulmaz, Kaan Yüksel
    The planned MALTA3 DMAPS designed in the standard TowerJazz 180 nm imaging process will implement the numerous process modifications, as well as front-end changes in order to boost the charge collection efficiency after the targeted fluence of 1 x 1015 1 MeV neq/cm2. The effectiveness of these changes have been demonstrated with recent measurements of the full size MALTA2 chip. With the original MALTA concept being fully asynchronous, a small-scale MiniMALTA demonstrator chip has been developed with the intention of bridging the gap between the asynchronous pixel matrix, and the synchronous DAQ. This readout architecture will serve as a baseline for MALTA3, with focus on improved timing performance. The synchronization memory has been upgraded to allow clock speeds of up to 1.28 GHz, with the goal of achieving a sub-nanosecond on-chip timing resolution. The subsequent digital readout chain has been modified and will be discussed in the context of the overall sensor architecture.
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    Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm
    (IOP Publishing Ltd, 2022) Rijnbach, M. van; Allport, P.; Asensi, I.; Berdalovic, I.; Bortoletto, D.; Buttar, C.; Denizli, Haluk; Oyulmaz, Kaan Yüksel
    The MALTA family of depleted monolithic pixel sensors produced in TowerJazz 180 nm CMOS technology target radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness >10(15) 1 MeV n(eq)/cm(2) and time resolution below 2 ns, with uniform charge collection and efficiency across the pixel of size 36.4 x 36.4 mu m(2) with small collection electrode. This contribution will present the comparison of samples produced on high-resistivity epitaxial silicon with Czochralski substrates, before and after neutron irradiation, and results from MALTA2 with a new cascoded front-end flavour that further reduces the RTS noise.
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    Timing performance of radiation hard MALTA monolithic pixel sensors
    (IOP Publishing Ltd, 2023) Gustavino, G.; Allport, P.; Asensi, I.; Berlea, D. V.; Bortoletto, D.; Denizli, Haluk; Oyulmaz, Kaan Yüksel
    The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to 2 x 10(15) 1 MeV n(eq)/cm(2) and time resolution below 2 ns, with uniform charge collection efficiency across the pixel of size 36.4 x 36.4 mu m(2) with a 3 mu m(2) electrode size. The MALTA2 demonstrator produced in 2021 on high-resistivity epitaxial silicon and on Czochralski substrates implements a new cascoded front-end that reduces the RTS noise and has a higher gain. This contribution shows results from MALTA2 on timing resolution at the nanosecond level from the CERN SPS test-beam campaign of 2021.