Kaya, ŞenolYılmaz, ErcanKahraman, AyşegülKaraçalı, Hüseyin2021-06-232021-06-2320150168-583X1872-9584https://doi.org/10.1016/j.nimb.2015.06.037https://hdl.handle.net/20.500.12491/8240The frequency dependent irradiation influences on Sm2O3 MOS capacitors have been investigated and possible use of Sm2O3 in MOS-based radiation sensor was discussed in this study. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated up to 30 grays. Capacitance-Voltage (C-V) measurements were recorded for various doses and the influences of irradiation were determined from the mid-gap and flat-band voltage shifts. In addition, the degradations of irradiation have been studied by impedance based leakage current-voltage (J-V) characteristics. The results demonstrate that J-V characteristics have not been significantly change by irradiation and implying that the excited traps have a minor effect on current for given dose ranges. However, the frequency of applied voltage during. the C-V measurements affects the irradiation response of devices, significantly. The variations on the electrical characteristics may be attributed to the different time dependency of acceptor and donor-like interface states. In spite of the variations on the device characteristics, low frequency measurements indicate that Sm2O3 is a potential candidate to be used as a dielectric layer in MOS based irradiation sensors. (C) 2015 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSm2O3 MOS CapacitorsIrradiation EffectsInterface StatesOxide Trapped ChargesArticle10.1016/j.nimb.2015.06.0373581881932-s2.0-84934783588Q2WOS:000359170800030Q1