Wang, HaodongFeng, MeixinZhong, YaozongChen, XinGao, HongweiYilmaz, ErcanSun, Qian2024-09-252024-09-2520232330-4022https://doi.org/10.1021/acsphotonics.3c01261https://hdl.handle.net/20.500.12491/13666In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photo generated carriers and make it work as a two-terminal normally off device. The device exhibited a high responsivity of 2.1 x 10(7) A/W and a high specific detectivity of 1.7 x 10(15) Jones under the illumination of 9.7 mu W/cm(2), indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.eninfo:eu-repo/semantics/closedAccessHEMTtwo-dimensional electron gasultravioletphotodetectorsdouble channelspersistent photoconductivityeffectArticle10.1021/acsphotonics.3c012611111801862-s2.0-85181070628Q1WOS:001144603000001Q1