Kaya, ŞenolYılmaz, Ercan2021-06-232021-06-2320140168-583X1872-9584https://doi.org/10.1016/j.nimb.2013.10.016https://hdl.handle.net/20.500.12491/7999The possible usage of BiFeO3 (bismuth ferrite) in MOS (metal-oxide-semiconductor) based radiation sensors was studied. Gamma radiation effects on the electrical characteristics of BiFeO3 MOS capacitors were investigated in detail. BiFeO3 thin films were deposited on p (100)-type silicon wafers with a thickness of 300 nm by magnetron sputtering. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated using a Co-60 gamma source from 0.5 to 16 Gray at a dose rate of 0.0030 Gy/s. Capacitance-Voltage measurements were recorded prior to and after irradiation and the effects of radiation were determined from the mid-gap and flat-band voltage shifts. The results show that BiFeO3 has a good response to gamma irradiation and can be used as a new material for future dielectric applications such as radiation sensors. (C) 2013 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessMultiferroic BiFeO3 MOS capacitorsInterface StatesOxide Trapped ChargesMultiferroic Radiation SensorsArticle10.1016/j.nimb.2013.10.0163191681702-s2.0-84892366645Q2WOS:000331427900027Q2