Koç, Nevin SoyluAltıntaş, Sevgi PolatGökçen, MuharremDoğruer, MusaAltuğ, CevherVarilci, Ahmet2024-01-222024-01-222022Koc, N. S., Altintas, S. P., Gokcen, M., Dogruer, M., Altug, C., & Varilci, A. (2022). Current-voltage characteristics of nano whisker ZnO/Si heterojunction under UV exposition. Sensors and Actuators A: Physical, 342, 113618.0924-42471873-3069http://dx.doi.org/10.1016/j.sna.2022.113618https://hdl.handle.net/20.500.12491/11963In/ZnO/p-Si heterojunction diode was produced to investigate the photo-responsivity and electrical features under ultraviolet (UV) light. A hydrothermal synthesis technique was used to coat the ZnO layer on the p-Si single crystal as nanowhisker/rods. The formation of surface and nanowhisker properties of the ZnO layer were investigated by scanning electron microscope (SEM). The I-V (current-voltage) analysis of the In/ZnO/p-Si diode was realized in dark and under UV (290-400 nm) illumination. Further, the main electrical parameters of the diode; such as reverse bias saturation current (I-V), ideality factor (n), zero bias barrier height (Phi(Bo)), resistance (R) and interface state density (N-ss) were obtained from the experimental I-V measurements by thermionic emission (TE) and Card and Rhoderick's function. Also, the power law of the photocurrents (I-PC), photoresponsivity (PR) and response time were extracted. Photo-responsivity and response time values of In/ZnO/p-Si heterojunction diode were obtained as 2.0 A/W and (rise/decay) 160/200 ms, respectively.eninfo:eu-repo/semantics/closedAccessZnO Nanorod/whiskerPhotodiodeUV IlluminationP-Si/ZnOPhoto-ResponsivityThin-FilmArticle10.1016/j.sna.2022.113618342172-s2.0-85130562238Q1WOS:000807773200005Q1