Kaya, ŞenolLök, RamazanAktağ, AliekberSeidel, JanYılmaz, Ercan2021-06-232021-06-2320140925-83881873-4669https://doi.org/10.1016/j.jallcom.2013.08.204https://hdl.handle.net/20.500.12491/7997The frequency dependent electrical behavior of BiFeO3 MOS capacitors was studied in this work. BiFeO3 thin films were deposited on p-type Si (100) substrates at 0 degrees C by RF magnetron sputtering and the structures were investigated by XRD and SEM measurements. Electrical characteristics of the capacitors were determined by C-V and G/omega-V measurements for several frequencies from 10 kHz to 1 MHz. The results illustrate that the C-V and G/omega-V characteristics of the devices are sensitive to both frequency and voltage variations. C-V characteristic variations decrease with increasing frequency and are mainly resulting from the presence of interface states (N-s) between silicon and BiFeO3. The G/omega-V characteristics of devices were found to be different for low and high frequencies. Variations in G/omega-V characteristics in the low frequency regions (f < 500 kHz) decrease with increasing frequency, however, in high frequency regions they increase with increasing frequency. For high frequency (1 MHz) characteristics of the capacitor, the capacitance has been corrected by eliminating the effects of the series resistance (R-s) because of its negligible response to high frequency; however, for conductance measurements it cannot be ignored. The C-V and G/omega-V analysis demonstrate that Rs and Ns are important factors that can affect electrical characteristics of the capacitor. (C) 2013 Elsevier B. V. All rights reserved.eninfo:eu-repo/semantics/closedAccessBiFeO3 MOS CapacitorInterface StatesSeries ResistanceConductanceXRDArticle10.1016/j.jallcom.2013.08.2045834764802-s2.0-84884617374Q1WOS:000326035200081Q1