Kaya, ŞenolAktağ, AliekberYılmaz, Ercan2021-06-232021-06-2320140168-583X1872-9584https://doi.org/10.1016/j.nimb.2013.11.006https://hdl.handle.net/20.500.12491/7998The effects of radiation on the electrical-interface-state density (D-it) and series resistance (R-s) characteristics of BiFeO3 MOS capacitors were studied in this work. To study the response of MOS devices to gamma irradiation over a range of doses, MOS samples were irradiated using a Co-60 gamma-ray source from 0.5 to 16 grays at a dose rate of 0.0030 Gy/s. C-V and G/omega-V measurements were recorded prior to and after irradiation at high (1 MHz) frequency. The effects of the radiation were determined from analysis of the C-V and G/omega-V curves. A slightly decrease in the R, values with increasing irradiation dose was observed. The total interface-state density was found to decrease because of the reordering and restructuring of radiation-induced defects in the MOS capacitors. The experimental results indicate that the electrical R-s and D-it characteristics of BiFeO3 MOS capacitors depend on the gamma-irradiation dose, and the calculated densities of the interface states are on the order of 10(11) eV(-1) cm(-2). However, the calculated D-it values are not high enough to pin the Fermi level of the Si substrate and thereby corrupt device operation over the given dose range. (C) 2013 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessRadiation EffectsFerroelectric BiFeO3 MOS CapacitorInterface StatesSeries ResistanceArticle10.1016/j.nimb.2013.11.00631944472-s2.0-84889652503Q2WOS:000331427900009Q2