Mutale, AlexDeevi, Seetharama C.Yılmaz, Ercan2021-06-232021-06-2320210925-83881873-4669https://doi.org/10.1016/j.jallcom.2021.158718https://hdl.handle.net/20.500.12491/5116In this work, Er2O3 films deposited by electron beam (E-beam) evaporation technique were annealed at 450 °C, 550 °C, and 650 °C in N2 atmosphere for 30 min. We then compared the electrical properties, the frequency dependency of the density of interface states, and series resistance of as-deposited and annealed Al/Er2O3/n-Si/Al MOS capacitors. The grain size measurements carried out by X-ray diffractometer (XRD) and the root mean square (RMS) surface roughness values obtained by atomic force microscopy (AFM) increased with an increase of annealing temperature. The C-V and G/?-V measurements were carried out at a frequency of 1 MHz for as-deposited and annealed MOS capacitors. The capacitance in the accumulation region decreased with an increase in annealing temperature, and the capacitor film annealed at 450 °C had the highest capacitance in the accumulation region as well as high-k value, and low barrier height. In addition, the C-V and G/?-V measurements carried out in the frequency range of 20 kHz to 1 MHz were analyzed to understand the effect of frequency on the series resistance Rs and interface states Dit. The measured and calculated results reveal a significant influence of frequency on both Rs and Dit of the fabricated MOS capacitor characteristics.eninfo:eu-repo/semantics/closedAccessAFMBarrier HeightE-beam DepositionEr2O3 Thin FilmsHigh Dielectric Constant-kInterface ChargesPDASeries ResistanceXRDArticle10.1016/j.jallcom.2021.1587188632-s2.0-85099650494Q1WOS:000621714200084Q1