Kimbugwe, Nakibinge TawfiqYılmaz, Ercan2021-06-232021-06-2320200957-45221573-482Xhttps://doi.org/10.1007/s10854-020-03783-zhttps://hdl.handle.net/20.500.12491/10437The aim of this study is to reduce the oxide and interface-trap charges and also improve the stability at the oxide-semiconductor interface by growing a SiO(2)interface layer on a Si wafer then depositing Al(2)O(3)thin film. Effective oxide charges density (N-ox), border trap charges density (N-bt), interface states density (N-it), diffusion potential (V-D), donor concentration (N-D), and barrier height(Phi(B)) were calculated using the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at different annealing temperatures. The flat-band voltage (V-fb) changed with annealing temperature and the V(fb)value for the 450 degrees C annealed sample was closest to the idealV(fb). The sample also possessed a high dielectric constant. For these reasons,C-V and G/w-V values of this sample at different frequencies were obtained. Compared to previous studies, very low N-bt values (similar to 10(9) eV(-1) cm(-2)), lowN(it)values (similar to 10(10) eV(-1) cm(-2)) and high Phi(B) values for the annealed samples were obtained due to the SiO2 interface layer.eninfo:eu-repo/semantics/closedAccessSemiconductor CapacitorsArticle10.1007/s10854-020-03783-z311512372123812-s2.0-85086777647Q2WOS:000542132000005Q3