Sadigov, A. Z.Ahmadov, F. I.Sadygov, Z. Y.Ahmadov, G. S.Berikov, D.Doğancı, EmreYılmaz, Ercan2023-09-282023-09-282022Sadigov, A. Z., Ahmadov, F. I., Sadygov, Z. Y., Ahmadov, G. S., Berikov, D., Holík, M., ... & Yilmaz, E. (2022). Improvement of parameters of micro-pixel avalanche photodiodes. Journal of Instrumentation, 17(07), P07021.1748-0221http://dx.doi.org/10.1088/1748-0221/17/07/P07021https://hdl.handle.net/20.500.12491/11764This work was supported by the Science Development Foundation under the President of the Republic of Azerbaian, Grant No. EIF-BGM-5-AZTURK-1/2018-2/01/1-M-01, Science Foundation of SOCAR and the JINR-Czech Republic Cooperation Program. We would like to thank Zecotek Photonics Inc. for providing MAPD samples.The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of collaboration with Zecotek Company. Measurements were carried out and discussed in terms of the important parameters such as the current-voltage and capacitance-voltage characteristic, gain, the temperature coefficient of breakdown voltage, breakdown voltage, and gamma-ray detection performance using an LFS scintillator. The obtained results showed that the newly developed MAPD-3NM photodiode outperformed the previous generation in most parameters and can be successfully applied in space application, medicine, high-energy physics, and security. New proposals are also discussed, for further improvement of the parameters of the MAPD photodiodes that will be produced in the coming years.eninfo:eu-repo/semantics/closedAccessPhoton Detectors for UVVisible and IR Photons (Solid-State)Article10.1088/1748-0221/17/07/P070211771192-s2.0-85134753358Q2WOS:000867442500003Q4