Allakhverdiev, Kerim R.Mikailov, F. A.Kulibekov, A. M.Türetken, Naif2021-06-232021-06-2319980141-1594https://doi.org/10.1080/01411599808228753https://hdl.handle.net/20.500.12491/5317The dielectric susceptibility of layered TlInS2 was studied in the temperature range of successive phase transitions. Thermal hysteresis was observed in the incommensurate phase. It was shown that after annealing the crystal at a fixed temperature within the incommensurate phase, the existing temperature interval of this phase reveals noticeable broadening. The thermal memory effect is discussed using a defect density wave model.eninfo:eu-repo/semantics/closedAccessThermal HysteresisMemory EffectsSemiconductorsFerroelectricsPhase TransitionsDielectric ResponseArticle10.1080/014115998082287536724574652-s2.0-0032269417Q3WOS:000079806100005Q3