Budak, ErhanBozkurt, Çetin2021-06-232021-06-2320100921-45261873-2135https://doi.org/10.1016/j.physb.2010.08.067https://hdl.handle.net/20.500.12491/6637Hexagonal boron nitride (h-BN) samples were prepared using the modified O'Connor method with KNO3 and Ca(NO3)(2) at different temperatures (1050, 1250, and 1450 degrees C). The samples were characterized by FTIR, XRD, and SEM techniques. Usage of representative metals exhibited a positive effect on the crystallization of h-BN and they caused the formation of nano-scale products at relatively low temperature. XRD results indicated that there was an increase in interlayer spacing due to the d-pi interaction. The calculated lattice constants were very close to the reported value for h-BN. (C) 2010 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessHexagonal Boron NitrideNanocrystalsO'Connor MethodCharacterizationArticle10.1016/j.physb.2010.08.06740522470247052-s2.0-77957879233Q2WOS:000284447300020Q3