Yılmaz, ErcanTuran, RaşitAktağ, AliekberAkgöl, Ali2021-06-232021-06-23201197814244996560160-8371https://doi.org/10.1109/PVSC.2011.6186216https://hdl.handle.net/20.500.12491/503537th IEEE Photovoltaic Specialists Conference, PVSC 2011 -- 19 June 2011 through 24 June 2011 -- Seattle, WA -- 89752We utilized a sputtering technique by using a single Cadmium Zinc Tellurium (CdZnTe) target to form alloys of 200 nm Cd 1-xZn xTe thin films onto heated (200-300-400°C) and unheated glass substrates for all 0 < x < 1 range. The films then were annealed at 150-300-450°C under the N 2 ambient. Measurements were performed before and after annealing by XRD, XPS, FTIR spectroscopes. The XRD studies revealed that heated Cd 1-xZn xTe films present a cubic oriented (111), (220) and (311) polycrystalline structure, whereas unheated films are largely amorphous. The XPS results under UHV were support the XRD measurements. FTIR analysis indicated that the increasing of deposition temperature increases absorption intensity. Depending on preparation conditions and heat treatment, the optical band gap calculations of respective films were obtained in the range of 1.46-1.95 eV. Results illustrate that Cd 1-xZn xTe thin film sputtered at 400°C and annealed at 450°C under the N 2 ambient displays a demanding behavior.eninfo:eu-repo/semantics/closedAccessAnnealingZincSputteringOptical filmsPhotonic Band GapX-ray ScatteringConference Object10.1109/PVSC.2011.6186216139013942-s2.0-84861021568N/A