Bacaksız, EminAksu, S.Çankaya, GüvenYılmaz, S.Polat, İ.Varilci, Ahmet2021-06-232021-06-2320110040-6090https://doi.org/10.1016/j.tsf.2011.01.254https://hdl.handle.net/20.500.12491/6979Micro-sized ZnO rods on a SnO2 coated glass substrate were obtained by the spray pyrolysis method. Then a p-type CuSCN layer was deposited on this micro-sized n-ZnO to produce a p-n heterojunction. Temperature dependent current-voltage characteristics were measured in the temperature range 150-300 K with a step of 25 K. The current-voltage characteristics exhibit electrical rectification behavior. The zero bias barrier height Phi(b0) increases and the ideality factor n decreases with an increase in temperature. The apparent Richardson constant and mean barrier height were found to be 0.0028 A cm(-2) K-2 and 0.228 eV respectively in the range 150-300 K. After a barrier height inhomogeneity correction, the Richardson constant and the mean barrier height were obtained as 6520 A cm(-2) K-2 and 0.840 eV, respectively. (C) 2011 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessZnO Micro-rodsCuSCN/n-ZnOHeterojunctionElectrical PropertiesArticle10.1016/j.tsf.2011.01.25451911367936852-s2.0-79952740260Q2WOS:000289333400041Q1