Allakhverdlev, K. R.Türetken, N.Salaev, Ferid M.Mikailov, F. A.2021-06-232021-06-2319950038-1098https://doi.org/10.1016/0038-1098(95)00566-8https://hdl.handle.net/20.500.12491/5295Two additional incommensurate phase transitions (PT's) at Ti = 206 K and T-tr = 79 K were observed in TlInS2 crystals. Peculiarities of the temperature behaviour of the dielectric susceptibility and the dielectric loops allowed to consider the PT's at Tc1 = 204 K and Tc2 = 201 K as incomplete lock-in transitions and the PT at T approximate to 195 K as a temperature range of the final lock-in transition. The PT at T-tr = 79 K was considered as an isomorphous transition. The experimental results of the second harmonic generation signal at low temperature are also in favour of such a conclusion. Peculiarities of the temperature behaviour of the dielectric properties at low temperature are qualitatively explained by means of the theory of two nonequivalent sublattices.eninfo:eu-repo/semantics/closedAccessSemiconductorsPhase TransitionsDielectric ResponseArticle10.1016/0038-1098(95)00566-896118278312-s2.0-0029473364Q2WOS:A1995TB45700004N/A