Effects of series resistance and interface state on electrical properties of Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS capacitors
Yükleniyor...
Dosyalar
Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Advances in Metal-Oxide-Semiconductor (MOS) capacitors fabrication and processing techniques have significantly reduced the adverse effects of processing on the disruption of the ideal MOS devices. However, changes in interface state density and series resistance have remained significant issues for the performance of MOS devices. In this paper, the impacts of multi-layers on the electrical interface states and series resistance characteristics of Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS capacitors is reported, by analyzing Capacitance - Voltage (C - V), conductance (G/omega) - V), series resistance, and interface states density. Ideal characteristics have been observed for obtained series resistance (R-s) and interface state density (D-it), and the calculated values of D-it are in order of (10(10) eV(2)Cm(-2)). The outcomes have demonstrated that the R(s )and the D-it are essential factors that influence the electrical characteristics of the MOS capacitors. Furthermore, interfacial layers are the cause of variations in the R-s and D-it.
Açıklama
Anahtar Kelimeler
Er2O3/Eu2O3/SiO2/n-Si MOS capacitors, Capacitance - Voltage, Conductance - Voltage, Series Resistance, Interface States Density
Kaynak
Microelectronic Engineering
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
232
