High-quality c-axis oriented non-vacuum Er doped ZnO thin films
Yükleniyor...
Tarih
2016
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Sci Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Preparation, growth, structure and optical properties of high-quality c-axis oriented non-vacuum Er doped ZnO thin films were studied. Zn1-xErxO (x = 0.0, 0.01, 0.02, 0.04, and 0.05) precursor solutions were prepared by sol-gel synthesis using Zn, and Er based alkoxide which were dissolved into solvent and chelating agent. Zn1-xErxO thin films with different Er doping concentration were grown on glass substrate using sol-gel dip coating. Thin films were annealed at 600 degrees C for 30 min, and tried to observe the effect of doping ratio on structural and optical properties. The particle size, crystal structure, surface morphologies and microstructure of all samples were characterized by X -Ray diffraction (XRD) and Scanning Electron Microscope (SEM). The UV-vis spectrometer measurements were carried out for the optical characterizations. The surface morphology of the Zn1-xErxO films depend on substrate nature and sol-gel parameters such as withdrawal speed, drying, heat treatment, deep number (film thickness) and annealing condition. Surface morphologies of Er doped ZnO thin films were dense, without porosity, uniform, crack and pinhole free. XRD results showed that, all Er doped ZnO thin films have a hexagonal structure and (002) orientation. The optical transmittance of rare earth element (Er) doped ZnO thin films were increased. The Er doped ZnO thin films showed high transparency ( > 85) in the visible region (400-700 nm). (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved. x
Açıklama
Anahtar Kelimeler
ZnO, Thin Film, Er-doping, Bandgap Energy, Orientation
Kaynak
Ceramics International
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
42
Sayı
7
