A detailed study on zero-bias irradiation responses of La2O3 MOS capacitors
Yükleniyor...
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Ieee-Inst Electrical Electronics Engineers Inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
La2O3 as a possible dielectric layer for a capacitor in MOS-based radiation sensors has been investigated under gamma irradiation doses up to 64 Gray. Capacitance-Voltage (C-V) and Conductance-Voltage (G/omega-V) characteristics including the series resistance (R-s) of the device have been studied. The La2O3 thin-film crystal structures, phase identification, and the elemental compositions of the films were investigated by X-ray diffractometer and energy-dispersive X-ray spectroscopies. The density of the interface states (D-it) and fading characteristics were calculated following a series correlations to C-V and G/omega-V measurements. A desired linear flat band voltage shift-dose relation was obtained using the capacitance measurements. We observed that R-s barely decreases as irradiation dose increases, which has a crucial effects mainly on conductance of the device characteristics. D-it features were improved with irradiation doses but still in the order of 10(10) eV(-1) cm(-2). This did not cause any significant device degradation through its operation. Finally, the fading values of the devices with La2O3 layers were found to be close to that of conventional SiO2 layers. The outcomes suggest that La2O3 may be a promising future gate dielectric material candidate for radiation sensors in given radiation dose range.
Açıklama
Anahtar Kelimeler
Fading, Radiation Effects, Radiation Response of La2O3, Radiation Sensors, La2O3 Dielectric Layer, La2O3 MOS Capacitors
Kaynak
Ieee Transactions On Nuclear Science
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
63
Sayı
2
