Magnetoresistivity study on Cr added Bi-2212 superconductor ceramics with experimental and theoretical approaches
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Tarih
2013
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This study investigates the change of the superconducting and physical properties of Cr added Bi-2212 superconductor ceramics prepared by the conventional solid-state reaction method with the aid of magnetoresistivity measurements performed in a range from 0 to 7 T. The zero resistivity transition temperatures (T-c), irreversibility fields (mu H-0(irr)), upper critical fields (mu H-0(c2)), penetration depths (lambda) and coherence lengths (xi) are estimated from the magnetoresistivity curves. Furthermore, activation energy (U-0) values of the ceramics produced are found using thermally activated flux creep model. The results show that the T-c value decreases from 80.7 K (52.6 K) to 70.4 K (13.4 K) for the pure sample (the sample doped with 1wt% Cr) with the increasement in the applied magnetic field. Likewise, the U-0 values reduce dramatically with increasing applied magnetic field. In fact, the U-0 of 302 K is the smallest at 7 T applied field for the sample doped with 1wt% Cr. Additionally, the mu H-0(irr) and mu H-0(c2) values decrease with the increase of the Cr addition. At absolute zero temperature (T = 0 K), the extrapolation of the mu H-0(irr)(T) and mu H-0(c2)(T) curves is used to obtain the mu H-0(irr)(0) and mu H-0(c2)(0) values of the samples. The inner (latter) is found to be about 85.87 T (191.21 T) T and 13.88 T (86.89 T) for the pure sample and the sample doped with 1wt% Cr, respectively. On the other hand, the xi and lambda values inferred from mu H-0(irr)(0) and mu H-0(c2)(0) are obtained to increase from 13.13 to 19.48 angstrom and 19.60 to 48.73 angstrom, respectively as the Cr addition level increases in the Bi-2212 bulk superconductor, presenting that the Cr doping suppresses the physical and superconducting properties of the samples as a result of the pair-breaking mechanism.
Açıklama
Anahtar Kelimeler
Kaynak
Journal Of Materials Science-Materials In Electronics
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
24
Sayı
1
