Now showing items 1-4 of 4
Structural characterization and electrical properties of Nd2O3 by sol-gel method
In the current study, Neodymium oxide (Nd2O3) was prepared by sol-gel method and deposited on P-type < 100 > silicon wafer. The chemical characterization of samples was done by Fourier transform infrared spectroscopy (FTIR), ...
Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor
In this study, we investigated the effects of applied voltage and frequencies on the electrical properties of Al/(Er2O3(150 nm)/SiO2(20 nm)/n-Si)/Al MOS capacitor. The e-beam deposited Er2O3/SiO2 films were annealed at 650 ...
Impact of SiO(2)interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal-oxide-semiconductor capacitors
The aim of this study is to reduce the oxide and interface-trap charges and also improve the stability at the oxide-semiconductor interface by growing a SiO(2)interface layer on a Si wafer then depositing Al(2)O(3)thin ...
Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices
The unique physical, chemical, and electronic properties of rare earth oxides have been of immense interest to replace SiO2 as a dielectric material in metal-oxide-semiconductor (MOS)-based sensors applications to accurately ...